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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK757 description drain current C i d =10a@ t c =25 drain source voltage- : v dss = 200v(min) applications high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 200 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 10 a p tot total dissipation@tc=25 50 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK757 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 200 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 1.0 5.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 5a 0.33 i gss gate source leakage current v gs = 16v;v ds = 0 10 ua i dss zero gate voltage drain current v ds =160v; v gs = 0 250 ua v sd diode forward voltage i f =10a; v gs =0 1.0 v pdf pdffactory pro www.fineprint.cn |
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